Lifting and supporting device

ABSTRACT

The invention relates to a lifting and supporting device for handling and positioning particularly large-surface elements in the shape of panels, especially in plasma processing installations. Said lifting and supporting device comprises a particularly metallic base plate, on which a plurality of particularly dielectric pins are arranged. Said pins may be set in pin holes especially provided in the base plate. Said panel-shaped element may be positioned on the pin end for the handling thereof or during a plasma processing. Said panel-shaped element may present an electrostatic charge. A small diameter for the pins and pin holes is selected such that, in conformity with the panel-shaped element provided with the electrostatic charge, an undesired electrostatic charge on said panel-shaped element is essentially avoided or, in conformity with the panel-shaped element to be plasma processed, a plasma perturbation in the area of the pin holes or pins is essentially avoided.

BACKGROUND OF THE INVENTION

The present invention relates to a lifting and supporting device forhandling and positioning particularly large-surface elements in theshape of panels, especially in plasma processing installations, as wellas a corresponding processing method and a device therefor.

During the processing and especially during the coating or etching ofsemiconductors, silicon wafers for the production of integrated circuitsfor example, or of dielectrics, as for example glass plates for theproduction of flat television screens, the substrates, which for themost part are in the form of panel-shaped elements, have to betransported, temporarily supported, etc., or, quite generally, have tobe handled in a certain way either during a processing step or betweenone step and the next. Unlike what happens in other fields of processinglogistics, however, this is associated with difficulties, because boththe components and the processes are extremely sensitive and even verysmall perturbations could cause considerable harm to the components oreven lead to their complete destruction.

A problem that arises quite generally in the handling of semiconductors,but particularly in the handling of dielectrics that carry suchelectrical circuits as, for example, thin film transistors, is theproblem of the electrostatic charging and the subsequent undesiredelectrostatic discharge. As can be seen from the schematic illustrationof FIG. 6, the various working processes, plasma coating processes beinga case in point, but also friction events during the transport of thepanel-shaped elements can cause the panel-shaped elements to becomeelectrostatically charged. This charge on the panel-shaped element 4 isschematically represented in FIG. 6 and there indicated by the referencenumber 8. If the charged panel element is now brought to a differentdistance from ground potential, as can happen, for example, during thelifting of the panel-shaped element, potential differences will occur onthe panel-shaped element 4 and in FIG. 6 are indicated by V₁ and V₂.These potential differences on the surface of the panel-shaped elementcan now have the effect of causing an electrostatic discharge across thecircuits or thin film transistors applied to the surface. This isschematically illustrated in FIG. 6 inside the frame at the center ofthe figure. But the electrostatic discharge can lead to the destructionof the component, so that in case of doubt the entire panel-shapedelement, complete with its plurality of circuits or thin filmtransistors, has to be regarded as a reject.

This problem has hitherto been tackled, first of all, by trying to avoidthe charging of the panel-shaped elements by, for example, ionizing thesurrounding air. But, it has been found that complete avoidance ofelectrostatic charging is hardly possible in actual practice. Anotherapproach to the solution of the problem is the undesired electrostaticdischarge is the one in which all the circuits applied to thesemiconductor or the dielectric are short-circuited during theproduction process by means of the application of additional conductors,so-called bus bars. But this has the disadvantage that it is associatedwith the greater cost of first applying and subsequently removing thebus bars. Over and above this, the bus bars also constitute obstaclesfor the remainder of the production process.

Especially in the case of plasma processes, a further problem associatedwith the handling of panel-shaped elements consists of the fact that thepresence of the lifting and supporting devices in the plasma chambersperturbs the plasma, which effects the properties of the elements to beprocessed with the plasma. In plasma processing installations, theelements that are to be processed with the plasma, e.g., suchpanel-shaped elements as, for example, silicon wafers or glass plates,are usually deposited on metallic base plates in order to be processedwith the plasma. To this end, pins are provided at the edges of the baseplate that can be made to descend into the base plate in order to permitthe raising and lowering of the panel-shaped elements, so that agripping device, the arm of a robot for example, with a fork-shapedholder can be inserted under the panel-shaped elements and transportthem from one processing station to the next. The pins of the knownlifting and supporting devices are arranged at the edge of the baseplate, because the pin holes in which the pins are moving constituteinhomogeneities in the metallic base plate and can therefore lead to amodification of the plasma above these regions. However, a modificationof the plasma above these regions would have the consequence that inthis area, for example, the deposition of coatings or the etching bymeans of the plasma, would be perturbed. However, since circuits or thinfilm transistors, i.e. active elements, are not usually applied to theedges of the panel-shaped elements, the arrangement of the pins and thepin holes in these regions does not do any harm. However, as the size ofthe panel-shaped elements increases and their thickness diminishes, thiswill once again lead to problems, because pins will now have to bearranged also at the center of the base plate in order to assureadequate support for the panel-shaped elements when they are raised orlowered. In this way, however, the pin holes will create inhomogeneitiesin the region of the center of the lifting and supporting device, whereit would likewise be desirable to have the possibility of producingactive areas of the panel-shaped elements. Hitherto, this problem hasbeen solved by producing several finished components on a singlepanel-shaped element that, on completion of the process, are separatedfrom each other by cutting the panel-shaped element. It is thereforepossible to provide appropriate pins in positions corresponding to thecutting regions, because perturbation of the plasma by pins and/or pinholes arranged in these regions will not have any harmful effects.However, since in the case of the production of, for example, flattelevision screens, we have a situation in which the individual activeregions of the panel-shaped elements become greater while the thicknessof the panel-shaped elements diminishes, this remedy is subject tocertain limitations.

Furthermore it is known, from U.S. Pat. No. 6,228,438 B1 for example,that the elements to be processed in the plasma can be supported on pinsin order to form a dielectric layer below the element to be processed.In this case, the pins will once again produce perturbations in theplasma in the neighborhood of the pins. These are attenuated by means ofadditional recesses around the pins in the base plate.

SUMMARY OF THE INVENTION

It is therefore the object of the present invention quite generally tocreate a lifting and supporting device that can be used in a pluralityof processes for handling and supporting panel-shaped elements,especially with large surface areas, and avoids the problems illustratedabove. In particular, it is the object of the present invention tocreate a lifting and supporting device for appropriate elements thatwill avoid damage due to undesired electrostatic discharges even in theabsence of any additional and costly measures. Furthermore, the liftingand supporting device is to cause the least possible perturbation of aplasma intended for the processing of the panel-shaped elements, so thatnegative effects on the production and the properties of thepanel-shaped elements can be avoided.

This object is attained by means of a lifting and supporting device inaccordance with claim 1 or claim 4 and/or a method or a device for theprocessing of panel-shaped substrates in accordance with claim 18 orclaim 19. Advantageous variants are described by the dependent claims.

A feature of the solution of the aforesaid task and all its partialaspects is that, given a lifting and supporting device with a baseelement on which there is provided a plurality of pins for carryingpanel-shaped elements, the diameter of the pins and/or the pin holesinto which the pins can be lowered is chosen to be sufficiently smallthat the problems described above can no longer occur and/or aresubstantially avoided. As will be explained in greater detail furtheron, it is precisely the thin and/or slender shape of the pins thatsolves various problems associated with traditional lifting andsupporting devices of the kind described hereinabove.

Thus, as the inventors have demonstrated, the problem of the undesiredelectrostatic discharge is avoided by virtue of the fact that, given athin design of dielectric pins, the production of potential differenceson the surface of the panel-shaped elements is clearly reduced.Depending on the properties of the panel-shaped elements, for examplethe thickness and the type of the panel-shaped elements, for examplesemiconductors or dielectrics, as also on the number and the type of theelectrical components, transistors for example, the reduction of thethickness of the pins leads to the avoidance of electrostatic dischargesand therefore of damage to the panel-shaped elements that have to behandled. Advantageously, the pins will here be made of a dielectricmaterial, because, given a base element preferably made of metal, in thecase of plasma processing installations for example, pins capable ofconducting would lead to the formation of considerable potentialdifferences on the panel-shaped elements that could not be avoided evenwhen the pins are designed to be thin.

With a view to making it possible for the panel-shaped elementssupported on the pins to be displaced relative to the base element, thepins are preferably capable of being lowered into the base element, andto this end, pin holes are provided in the latter. The base element canbe a plate, a grid, transport forks or the like.

When the lifting and supporting device in accordance with the inventionis to be used in plasma processing installations, for example, forpositioning the panel-shaped elements that are to be processed, duringthe plasma process, the panel-shaped element is usually deposited on thebase plate, which is made of metal to facilitate the production of theplasma. For this use, the pins of the lifting and supporting device arelikewise made to be capable of being lowered into the base plate,because they serve only for raising and lowering the panel-shapedelements. But, the pin holes provided for this purpose produce theinhomogeneities in the base element that perturb the plasma above themand are to be avoided in accordance with the invention. For thisparticular case, therefore, the diameter of the pin holes andconsequently also the diameter of the pins that move in them has to beselected sufficiently small to substantially avoid a perturbation of theplasma and therefore damage to the panel-shaped element. Since apossible perturbation of the plasma by the inhomogeneities of the baseelement depends also on the plasma itself and on the element that is tobe processed, the diameter of the pinholes and/or the pins must bechosen in conformity with the particular case.

In general, however, it has to be stressed that whenever it is desiredto avoid the problem of undesired electrostatic discharges and to avoidalso plasma perturbations, the diameter of the pins of the lifting andsupporting device should be chosen as small as possible. The preciselimit of the diameter of the pins and/or the pinholes has to bedetermined in conformity with the individual case, but this does notrepresent a problem for a person skilled in the art. On the basis of theknowledge of a person skilled in the art and the present disclosure,this limiting value can be determined in each individual case by meansof appropriate tests or by means of numerical simulation.

In general, however, it has been found that, especially for the case ofthe lifting and supporting device being used in plasma processinginstallations, the diameter of the pins should be smaller than thethickness of the plasma sheath that surrounds the plasma.

Especially for avoiding undesired electrostatic discharges, it has beenfound advantageous if the diameter of the pins is less than a fifteenthpart of their length that projects above the base element, especiallythe metallic base element. If the pin diameter is to be of advantageoussize, it has thus been found that the diameter of the pins should besmaller than 3 mm, preferably smaller than 2 mm, and most preferablyequal to 1.8 mm.

In order to assure an adequate support for the panel-shaped elementsthat are to be carried and to avoid making excessive demands on thepins, it is advantageous to provide an adequate number of pins persquare meter of the area of the base element. Preferably, the number ofpins per square meter of base element area should be greater than 5,even more preferably greater than 10, and especially greater than 15.Especially when the panel-shaped elements are very thin, as is the case,for example, with glass substrates for flat television screens, theaverage distance between pins should not be greater than 300 mm, and inall cases it will be advantageous if the pins are uniformly distributedover the base element.

In the case in which the lifting and supporting device for the avoidanceof undesired electrostatic discharges comprises dielectric pins, it ispreferred for the pins to be made of a dielectric with a low dielectricconstant, since this will further reduce the danger of potentialdifferences on the surface of the panel-shaped elements.

However, care will have to be taken to assure that the pins will alsohave suitable mechanical properties. To this end, it is particularlyadvantageous when the pins have an adequate elasticity, i.e. are made ofan appropriately elastic material, for this will prevent the very thinpins from breaking when transverse forces are applied to them.Transverse forces may occur, for example, as a result of the thermalexpansion of the supported panel-shaped elements during the processingor due to incorrect alignment of the pins when they are raised orlowered. Depending on the particular area in which the device is used,it has been found advantageous for the pins to be produced from apolymer or from a ceramic material. Particularly advantageous materialsin this connection are polytetrafluorethylene, polyisobutylene,polyacrylate, polyethylene, as well as quartz, cordierite, aluminumoxide or zirconium.

With a view to reducing the transverse forces acting on the pin, it isalso advantageous to avoid adhesion between the end of the pins on whichthe panel-shaped element is supported and the panel-shaped element. Itis particularly important to avoid sticking. This can be obtained, forexample, by having the pins arranged in such a manner as to enable themto rotate about their longitudinal axis. The rotation of the pins avoidsan excessive adhesion between the ends of the pins and the panel-shapedelement, so that the friction force needed for transferring transverseforces cannot be attained. As an alternative to rotation of the pinsabout their longitudinal axis, the pins could also be made to perform anoscillating translatory motion along their longitudinal axis. To thisend, it may be advantageous to provide a Pierce oscillator capable ofproducing the translatory motions.

A further possibility of avoiding excessively large transverse forcesconsists of providing two mutually independent sets of pins thatalternate in supporting the panel-shaped element or raising or loweringit.

With a view to avoiding excessively large transverse forces, it is alsoadvantageous to design the end of the pins on which the panel-shapedelement is supported in such a manner as not to make it possible forlarge friction forces to be produced. To this end, it is possible fortheir surface to be polished smooth or to apply a coating with a lowcoefficient of friction.

As already mentioned earlier on, it is possible for the lifting andsupporting device to be employed when panel-shaped substrates have to beprocessed, especially when they have to be coated, preferably withPECVD, or when dielectric substrates have to be etched, especially bymeans of dry etching or plasma etching to use especially glass orsemiconductor materials or to provide them in the appropriateinstallations.

Further advantages, features and characteristics of the presentinvention will be brought out more clearly by the following detaileddescription of a particular embodiment, which makes reference to theappended drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings, all of which are purely schematic, show:

FIG. 1 is a cross-sectional view of a lifting and supporting device onwhich there is arranged a glass plate once during the plasma processingand again during the raising of the glass plate;

FIG. 2 is a cross section through the lifting and supporting device witha raised glass plate;

FIG. 3 is a cross section through the lifting and supporting device witha raised glass plate in which the pins are arranged to be rotatable;

FIG. 4 is a cross section through a lifting and supporting device with araised glass plate in which the pins can be made to oscillate alongtheir longitudinal axis by means of a Pierce oscillator;

FIG. 5 is several cross sections though a lifting and supporting deviceduring the lowering of a glass plate, where the lifting and supportingdevice is provided with two sets of pins that alternatingly support theglass plate, as well as a diagram that shows the path of the two sets ofpins and the glass plate plotted against time;

FIG. 6 is a schematic representation of the undesired inhomogeneousvoltage distribution of a glass plate with an applied electrostaticcharge at different distances from the base plate, where the voltagedifference can lead to an undesired electrostatic discharge on the glassplate with the circuits provided thereon.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

FIG. 1 shows, as a cross section and in two partial representations, aportion of an embodiment of the lifting and supporting device inaccordance with the invention, where in the first view, the pin 2 islowered into base plate 1 and the panel-shaped element 4 to beprocessed, a glass plate for example, is deposited on the base plate 1and, in the other view, the pin 2 is raised and projects from the baseplate 1 and carries the glass plate 4 on one of its ends 9. In theschematic representation of FIG. 1 the pin hole 3 is shown only in itsupper region. However, the pin hole 3 may also be designed in such amanner as to have the same diameter over the whole of its length. Toassure a better representation, however, the pin hole here shown has aclearly larger diameter in its upper region than the pin 2. Althoughthis constitutes a possible embodiment, the preferred embodiment willusually be the one in which the pin hole 3 has no more than a minimallylarger diameter than the pin 2 and, more precisely, only to such anextent as to permit the pin 2 to move freely in the pin hole 3. In thiscase, it will not be necessary to change the diameter of the pin hole 3over its length.

As is likewise shown in FIG. 1, the lifting and supporting device isemployed in the plasma processing of a glass plate 4. To this end, aplasma 5 is ignited above the glass plate 4 after the glass plate 4 hasbeen placed on the metallic base plate 1. A plasma-free space is formedbetween the plasma 5 and the glass plate 4, which is here described asthe plasma sheath 6. The plasma sheath 6 will usually have a thicknessof 2 to 3 mm. Correspondingly, the preferred embodiment in accordancewith FIG. 1 is designed in such a manner that both the diameter of thepinholes 3 and also the corresponding diameter of the pins 2 is smallerthan the thickness of the plasma sheath 6. Consequently, the radius ofthe pin holes 3, as also the corresponding radius of the pins 2 in theillustrated embodiment, is less than 1 mm.

FIG. 2 likewise shows a portion of the cross section of an embodiment ofthe lifting and supporting device, where the pin 2 is fully raised outof the base plate (the pin hole 3 is not shown here). This embodimentschematically illustrates a further possibility of the design inaccordance with the invention of the pins 2, namely that the radius ofthe pins 2 is smaller than the thirtieth part of its total height hi inthe fully extended position. This embodiment is particularly intendedfor the handling of glass plates that are provided with circuits and areliable to be damaged as a result of undesired electrostatic discharges.

Each of FIGS. 3 to 5 shows portions of the cross section of lifting andsupporting devices in accordance with the invention in which measureshave been taken to avoid an excessive loading of the pins 2 due toundesired transverse forces when the panel-shaped elements 4 are raisedor lowered. In particular, the embodiments shown in FIGS. 3 to 5 aredesigned with a view to avoiding an excessive adhesion between the ends9 of the pins 2 on the one hand and the panel-shaped elements on theother, i.e. minimizing the friction forces.

In the embodiment in accordance with FIG. 3, the pins 2 are rotatablysupported, so that they can rotate about their longitudinal axis. Whenthey are raised or lowered or during processing of the panel-shapedelements 4, the pins 2 are rotated, so that sticking or adhesion of theends 9 of the pins 2 to the panel-shaped elements is avoided. Thisprecaution, once again, assures that no excessively strong transverseforces—as could result from, for example, an inexact orientation of thepins 2—can be exerted on the pins.

In the embodiment in accordance with FIG. 4, this problem of adhesionand/or transverse forces is solved by subjecting the pins 2 totranslatory oscillations along the longitudinal axis of the pins 2 bymeans of, for example, a Pierce oscillator, so that the pins 2 will beperiodically relieved of the load due to the panel-shaped element 4. Inthis case, once again, the precaution avoids the coming into being of anexcessively strong bond between the end 9 of the pins 2 and thepanel-shaped element 4, which could lead to the transfer of inadmissiblyhigh transverse forces to the pins 2.

Yet another solution of this problem is shown in the embodiment inaccordance with FIG. 5. In this case, two sets of pins 2 and 2′ areprovided in the lifting and supporting device in accordance with theinvention, and alternate in performing the carrying function for thepanel-shaped element 4 during raising or lowering or similar operations.This result can be obtained, for example, by moving the pins 2 inaccordance with a stepped pattern in the path-time diagram, so that thepanel-shaped element 4 will be alternatingly supported, first on the oneset of pins 2 and then on the other set of pins 2′.

1. A lifting and supporting device for handling and supportingparticularly large-surface elements in the shape of panels in plasmaprocessing installations, with a base plate on which there is arranged aplurality of dielectric pins on the ends of which the panel-shapedelement can be supported for handling, where the panel-shaped elementmay carry an electrostatic charge, characterized in that the diameter ofthe pins is selected sufficiently small, so that, matched to thepanel-shaped element carrying the electrostatic charge, an undesiredelectrostatic discharge on the panel-shaped element is substantiallyavoided, and wherein the diameter of the pins is less than 1 mm and alsosmaller than the thirtieth part of their length that can be raised abovethe base plate.
 2. A lifting and supporting device in accordance withclaim 1, characterized in that the pins can be lowered into pin holesprovided on the base plate.
 3. A lifting and supporting device inaccordance with claim 1, characterized in that the diameter of the pinsis smaller than the thickness of the plasma sheath.
 4. A lifting andsupporting device in accordance with claim 1, characterized in that thenumber of the pins per square meter of the surface area of the baseplate is greater than
 5. 5. A lifting and supporting device inaccordance with claim 1, characterized in that the average distancebetween the pins is not greater than 300 mm and that the pins areuniformly distributed over the base plate.
 6. A lifting and supportingdevice in accordance with claim 1, characterized in that the pins have alow dielectric coefficient.
 7. A lifting and supporting device inaccordance with claim 1, characterized in that the pins are made of anelastic material.
 8. A lifting and supporting device in accordance withclaim 1, characterized in that the pins are made of a polymer.
 9. Alifting and supporting device in accordance with claim 1, characterizedin that the pins are arranged so as to be rotatable about theirlongitudinal axis.
 10. A lifting and supporting device in accordancewith claim 1, characterized in that the pins can perform an oscillatingsliding motion along their longitudinal axis.
 11. A lifting andsupporting device in accordance with claim 1, characterized in thatthere are provided two mutually independent sets of pins that renderpossible independent raising and lowering motions.
 12. A lifting andsupporting device in accordance with claim 1, characterized in that thepin ends on which the panel-shaped element is supported are providedwith a polished surface and/or a coating with a low coefficient offriction.
 13. A method of processing panel-shaped substrates,characterized in that the panel-shaped substrates are moved with thelifting and supporting device in accordance with claim
 1. 14.Installation for processing panel-shaped substrates, characterized inthat the installation comprises a lifting and supporting device inaccordance with claim 1 for handling and supporting substrates that aremoved, by the lifting and supporting device.
 15. A lifting andsupporting device in accordance with claim 4, characterized in that thenumber of pins per square meter of the surface area of the base plate isgreater than
 10. 16. A lifting and supporting device in accordance withclaim 15, characterized in that the number of pins per square meter ofthe surface area of the base plate is greater than
 15. 17. A lifting andsupporting device in accordance with claim 8, characterized in that thepins are made of polytetrafluorethylene, polyisoethylene, polyacrylatesor polyethylene.
 18. A lifting and supporting device in accordance withclaim 1, characterized in that the pins are made of a ceramic material.19. A lifting and supporting device in accordance with claim 18,characterized in that the pins are made of quartz, cordierite, aluminumoxide or zirconium.
 20. A method of processing panel-shaped substratesin accordance with claim 13, characterized in that the method includescoating the panel-shaped substrates.
 21. A method of processingpanel-shaped substrates in accordance with claim 20, characterized inthat coating includes coating the panel-shaped substrates by means ofplasma enhanced chemical vapor deposition.
 22. A method of processingpanel-shaped substrates in accordance with claim 13, characterized inthat the method includes etching the panel-shaped substrates.
 23. Amethod of processing panel-shaped substrates in accordance with claim22, characterized in that etching includes dry etching.
 24. A method ofprocessing panel-shaped substrates in accordance with claim 22,characterized in that etching includes plasma etching.
 25. A method ofprocessing panel-shaped substrates in accordance with claim 13,characterized in that substrates are dielectric substrates.
 26. A methodof processing panel-shaped substrates in accordance with claim 25,characterized in that dielectric substrates are glass or semiconductormaterials.
 27. Installation for processing panel-shaped substrates inaccordance with claim 14, characterized in that processing includescoating the panel-shaped substrates.
 28. Installation for processingpanel-shaped substrates in accordance with claim 27, characterized inthat coating includes coating the panel-shaped substrates by means ofplasma enhanced chemical vapor deposition.
 29. Installation forprocessing panel-shaped substrates in accordance with claim 14,characterized in that the processing includes etching the panel-shapedsubstrates.
 30. Installation for processing panel-shaped substrates inaccordance with claim 29, characterized in that etching includes dryetching.
 31. Installation for processing panel-shaped substrates inaccordance with claim 29, characterized in that etching includes plasmaetching.
 32. Installation for processing panel-shaped substrates inaccordance with claim 14, characterized in that substrates aredielectric substrates.
 33. Installation for processing panel-shapedsubstrates in accordance with claim 32, characterized in that dielectricsubstrates are glass or semiconductor materials.
 34. A lifting andsupporting device for handling and supporting large-surface elements inthe shape of panels in plasma processing installations, where theelement may carry an electrostatic charge, comprising: a metallic baseplate having pin holes; a plurality of pins that can be lowered into thepin holes; the pins having ends on which the element can be supportedfor handling or during the plasma processing; wherein the pins or thepin holes have a small diameter that substantially does not perturbplasma of the element in a region abutting the pins or the pin holes;wherein the pins are made of dielectric material; and wherein thediameter of the pins is less than 1 mm and also smaller than thethirtieth part of their length that can be raised above the base plate.35. A lifting and supporting device in accordance with claim 34,characterized in that the diameter of the pins is smaller than thethickness of a plasma sheath.
 36. A lifting and supporting device inaccordance with claim 34, characterized in that the number of the pinsper square meter of a surface area of the base plate is greater than 5.37. A lifting and supporting device in accordance with claim 36,characterized in that the number of the pins per square meter of asurface area of the base plate is greater than
 10. 38. A lifting andsupporting device in accordance with claim 37, characterized in that thenumber of the pins per square meter of a surface area of the base plateis greater than
 15. 39. A lifting and supporting device in accordancewith claims 34, characterized in that an average distance between thepins is not greater than 300 mm and that the pins are uniformlydistributed over the base plate.
 40. A lifting and supporting device inaccordance with claim 34, characterized in that the pins have a lowdielectric coefficient.
 41. A lifting and supporting device inaccordance with claim 34, characterized in that the pins are made of anelastic material.
 42. A lifting and supporting device in accordance withclaim 34, characterized in that the pins are made of a polymer or aceramic material.
 43. A lifting and supporting device in accordance withclaim 42, characterized in that the pins are made ofpolytetrafluorethylene, polyisoethylene, polyacrylates or polyethylene.44. A lifting and supporting device in accordance with claim 42,characterized in that the pins are made of quartz, cordierite, aluminumoxide or zirconium.
 45. A lifting and supporting device in accordancewith claim 34, characterized in that the pins are arranged so as to berotatable about a longitudinal axis of the pins.
 46. A lifting andsupporting device in accordance with claim 34, characterized in that thepins can perform an oscillating sliding motion along a longitudinal axisof the pins.
 47. A lifting and supporting device in accordance withclaim 34, characterized in that there are provided two mutuallyindependent sets of pins that render possible independent raising andlowering motions.
 48. A lifting and supporting device in accordance withclaim 34, characterized in that the ends on which the element issupported are provided with a polished surface and/or a coating with alow coefficient of friction.
 49. A method of processing panel-shapedsubstrates comprising: providing large-surface elements in the shape ofpanels in plasma processing installations, the element carrying anelectrostatic charge; providing a lifting and supporting devicecomprising a metallic base plate having pin holes and a plurality ofpins that can be lowered into the pin holes supporting the element onends of the pins; substantially not perturbing plasma of the element ina region abutting the pins or the pinholes; wherein the pins are made ofdielectric material; and wherein the diameter of the pins is less than 1mm and also smaller than the thirtieth part of their length that can beraised above the base plate.
 50. A method of processing panel-shapedsubstrates in accordance with claim 49, characterized in that the methodincludes coating the elements.
 51. A method of processing panel-shapedsubstrates in accordance with claim 49, characterized in that the methodincludes etching the elements.
 52. A method of processing panel-shapedsubstrates in accordance with claim 51, characterized in that etchingincludes dry etching.
 53. A method of processing panel-shaped substratesin accordance with claim 51, characterized in that etching includesplasma etching.